新闻中心
News Center
The 2022 (Yinchuan) Semiconductor Materials Branch Annual Meeting "settled" in Yinchuan! Zhongxin Wafer will be there for you!
2021.11.06

    On October 28, the 2021 China Semiconductor Material Industry Development (Kaihua) Summit and the 30th Anniversary Celebration of the Founding of the Semiconductor Materials Branch opened smoothly in Kaihua, Zhejiang. More than 300 experts, scholars, and industry elites from nearly 200 units gathered together to discuss the future development of new semiconductor materials. The theme of this conference is "Thirty years of hard work, seizing opportunities to show the future". It aims to review the 30-year history of the association and focus on the current status of the first, second, and third generation semiconductor materials and other technologies and industries. Carry out active and extensive exchanges and discussions with development trends and hot issues in the industry to seize rare opportunities to strengthen and expand my country's semiconductor materials industry.

    As the organizer of the next "2022 (Yinchuan) Semiconductor Materials Branch Annual Meeting", general manager of Zhongxin Wafer Guo Jianyue was invited to attend the meeting And introduced Ningxia Semiconductor Wafer  Co., Ltd., located in "the Oasis Beyond the Great Wall ", to the guests at the scene. Welcomes colleagues from all walks of life to gather in Yinchuan in 2022 and visit Ningxia Zhongxin Wafer to seek the future development of new semiconductor materials!

    Ningxia Zhongxin Wafer was founded in December 2015 and officially put into production in March 2017. It is mainly engaged in the production of semiconductor ingots and slices. The main products are 4-12 inch semiconductor single crystal ingots, which are supplied to Shanghai and Hangzhou factories. . The company adopts the advanced single crystal furnace (32-inch thermal field, maximum loading capacity of 500kg) equipment independently developed by the group. Through continuous research and practice, it successfully overcomes the temperature stability control and the pressure distribution in the furnace during the 12-inch crystal rod drawing process. A number of technical difficulties, such as ultra-low resistivity for power devices and defect-free (COP Free) for LOGIC and MEMORY single crystal mass production technologies. Recently, a 12-inch 450kg semiconductor single crystal silicon rod has been successfully drawn for semiconductors. The industry has made a huge contribution to the localization of large-diameter wafers!